PBSS3515M View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PBSS3515M Datasheet PDF : 9 Pages
| |||
NXP Semiconductors
15 V, 0.5 A
PNP low VCEsat (BISS) transistor
600
handbook, halfpage
hFE
(1)
400
(2)
200
(3)
MLD665
0
−10−1
−1
VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
Product data sheet
PBSS3515M
−1200
handbook, halfpage
VBE
(mV)
−1000
−800
−600
−400
MLD667
(1)
(2)
(3)
−20−010−1
−1
VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
−10
−102
−103
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
−103
handbook, halfpage
VCEsat
(mV)
−102
−10
MLD669
(2) (1)
(3)
−−110−1
−1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−1200
handbook, halfpage
VBEsat
(mV)
−1000
−800
−600
−400
MLD668
(1)
(2)
(3)
−20−010−1
−1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
IC (mA)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Jul 22
5
Share Link: 