PBYL3020CT View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PBYL3020CT Datasheet PDF : 6 Pages
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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYL3025CT, PBYL3025CTB series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
SOT78 package, in free air
SOT404 package, pcb mounted, minimum
footprint, FR4 board
MIN.
-
-
-
-
TYP.
-
-
60
50
MAX. UNIT
2 K/W
1.5 K/W
- K/W
- K/W
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Cd
Junction capacitance
IF = 15 A; Tj = 150˚C
IF = 15 A; Tj = 125˚C
IF = 30 A; Tj = 125˚C
IF = 30 A
VR = VRWM
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
MIN.
-
-
-
-
-
-
-
TYP.
0.35
0.38
0.52
0.6
1
22
700
MAX. UNIT
0.43 V
0.46 V
0.6 V
0.67 V
5 mA
40 mA
- pF
March 1998
2
Rev 1.000
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