PBYR1040F View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PBYR1040F Datasheet PDF : 6 Pages
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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR1045F, PBYR1045X series
10 Forward dissipation, PF (W)
Vo = 0.41 V
Rs = 0.016 Ohms
8
PBYR1045X
Ths(max) (C)
95
D = 1.0
106
0.5
6
0.2
117
0.1
4
128
I
tp
D
=
tp
T
2
139
T
t
0
150
0
5
10
15
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
8 Forward dissipation, PF (W)
Vo = 0.41 V
7 Rs = 0.016 Ohms
6
5
4
PBYR1045X Ths(max) (C) 106
a = 1.57
1.9
2.2
2.8
117
4
128
3
2
139
1
0
150
0
2
4
6
8
10
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
50 Forward current, IF (A)
Tj = 25 C
Tj = 125 C
40
PBYR1045X
30
typ
20
max
10
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4
Forward voltage, VF (V)
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
100 Reverse current, IR (mA)
125 C
10
100 C
1 75 C
50 C
0.1
PBYR1045
Tj = 25 C
0.01
0
25
50
Reverse voltage, VR (V)
Fig.4. Typical reverse leakage current; IR = f(VR);
parameter Tj
Cd / pF
1000
PBYR1045
100
10
1
10
100
VR / V
Fig.5. Typical junction capacitance; Cd = f(VR);
f = 1 MHz; Tj = 25˚C to 125 ˚C.
10 Transient thermal impedance, Zth j-hs (K/W)
1
0.1
PD
tp
D=
tp
T
0.01
1us
10us
T
t
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s) PBYR1045X
Fig.6. Transient thermal impedance; Zth j-hs = f(tp).
July 1998
3
Rev 1.200
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