PDTC115T View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PDTC115T Datasheet PDF : 10 Pages
| |||
Philips Semiconductors
PDTC115T series
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 1 mA
IC = 5 mA; IB = 0.25 mA
R1
bias resistor 1 (input)
Cc
collector capacitance IE = ie = 0 A; VCB = 10 V;
f = 1 MHz
Min
Typ
Max
Unit
-
-
100
nA
-
-
1
µA
-
-
50
µA
-
-
100
nA
100
-
-
-
-
150
mV
70
100
130
kΩ
-
-
2.5
pF
103
hFE
(1)
(2)
(3)
006aaa058
102
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
1
006aaa059
VCEsat
(V)
10−1
(1)
(2)
(3)
10−2
10−1
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 14021
Product data sheet
Rev. 04 — 17 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 10
Share Link: 