NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open
Product data sheet
PDTA124T series
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to ambient
SOT23
SOT54
SOT323
SOT346
SOT416
SOT490
SOT883
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
VALUE
500
250
625
500
833
500
500
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICEO
IEBO
hFE
VCEsat
R1
Cc
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input resistor
collector capacitance
VCB = −50 V; IE = 0 A
VCE = −30 V; IB = 0 A
VCE = −30 V; IB = 0 A;
Tj = 150 °C
VEB = −5 V; IC = 0 A
VCE = −5 V; IC = −1 mA
IC = −10 mA; IB = −0.5 mA
IE = ie = 0 A; VCB = −10 V;
f = 1 MHz
MIN.
−
−
−
TYP.
−
−
−
MAX. UNIT
−100 nA
−1
μA
−50 μA
−
−
100 −
−
−
15.4 22
−
−
−100 nA
−
−150 mV
28.6 kΩ
3
pF
2004 Aug 04
5