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PDTC114Y(2011) View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
Manufacturer
PDTC114Y
(Rev.:2011)
NXP
NXP Semiconductors. NXP
PDTC114Y Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Nexperia
PDTC114Y series
NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
open emitter
-
open base
-
open collector
-
-
negative
-
IO
output current
-
ICM
peak collector current
single pulse;
-
tp 1 ms
Ptot
total power dissipation
Tamb 25 C
PDTC114YE (SOT416)
[1][2] -
PDTC114YM (SOT883)
[2][3] -
PDTC114YT (SOT23)
[1] -
PDTC114YU (SOT323)
[1] -
Tj
junction temperature
-
Tamb
ambient temperature
65
Tstg
storage temperature
65
Max Unit
50
V
50
V
6
V
+40 V
6
V
100
mA
100
mA
150
mW
250
mW
250
mW
200
mW
150
C
+150 C
+150 C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
PDTC114Y_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 18 November 2011
© Nexperia B.V. 2017. All rights reserved
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