PDTC114Y View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

PDTC114Y

NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ

NXP Semiconductors. 

NXP Semiconductors

NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = 47 kΩ

Product data sheet

PDTC114Y series

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

ICBO

ICEO

IEBO

hFE

VCEsat

Vi(off)

Vi(on)

R1

collector-base cut-off current

collector-emitter cut-off current

emitter-base cut-off current

DC current gain

collector-emitter saturation voltage

input-off voltage

input-on voltage

input resistor

VCB = 50 V; IE = 0

VCE = 30 V; IB = 0

VCE = 30 V; IB = 0; Tj = 150 °C

VEB = 5 V; IC = 0

VCE = 5 V; IC = 5 mA

IC = 5 mA; IB = 0.25 mA

IC = 100 μA; VCE = 5 V

IC = 1 mA; VCE = 0.3 V

R-----2--

R1

resistor ratio

Cc

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

MIN.

−

−

−

−

100

−

−

1.4

7

TYP.

−

−

−

−

−

−

0.7

0.8

10

MAX. UNIT

100 nA

1

μA

50

μA

150 μA

−

100 mV

0.5 V

−

V

13

kΩ

3.7 4.7 5.7

−

−

2.5 pF

2004 Aug 17

5

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