PDTC144EE,115(2011) View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

PDTC144EE,115
(Rev.:2011)

NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ

NXP Semiconductors. 

NXP Semiconductors

PDTC144E series

NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

VCBO

VCEO

VEBO

VI

collector-base voltage

collector-emitter voltage

emitter-base voltage

input voltage

positive

open emitter

-

open base

-

open collector

-

-

negative

-

IO

output current

-

ICM

peak collector current

single pulse;

-

tp  1 ms

Ptot

total power dissipation

Tamb  25 C

PDTC144EE (SOT416)

[1][2] -

PDTC144EM (SOT883)

[2][3] -

PDTC144ET (SOT23)

[1] -

PDTC144EU (SOT323)

[1] -

Tj

junction temperature

-

Tamb

ambient temperature

65

Tstg

storage temperature

65

Max Unit

50

V

50

V

10

V

+40 V

10

V

100

mA

100

mA

150

mW

250

mW

250

mW

200

mW

150

C

+150 C

+150 C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reflow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.

PDTC144E_SER

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 9 — 15 November 2011

© NXP B.V. 2011. All rights reserved.

3 of 17

Share Link: