PDTC144E(2011) View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PDTC144E Datasheet PDF : 17 Pages
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NXP Semiconductors
PDTC144E series
NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k
7. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
-
-
100 nA
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 C
VEB = 5 V; IC = 0 A
-
-
1
A
-
-
5
A
-
-
90
A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
80
-
-
-
-
150 mV
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = 5 V; IC = 100 A
VCE = 0.3 V; IC = 2 mA
-
1.2 0.8 V
3
1.6 -
V
33
47
61
k
R2/R1 bias resistor ratio
0.8 1
1.2
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
-
-
2.5 pF
f = 1 MHz
fT
transition frequency VCE = 5 V; IC = 10 mA; [1] -
230 -
MHz
f = 100 MHz
[1] Characteristics of built-in transistor
PDTC144E_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 15 November 2011
© NXP B.V. 2011. All rights reserved.
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