PUMH1 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PUMH1 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN/NPN resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
Product specification
PEMH1; PUMH1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
Per transistor
Rth j-a
thermal resistance from junction to ambient Tamb ≤ 25 °C
SOT363
note 1
625
SOT666
notes 1 and 2
625
Per device
Rth j-a
thermal resistance from junction to ambient Tamb ≤ 25 °C
SOT363
note 1
416
SOT666
notes 1 and 2
416
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
UNIT
K/W
K/W
K/W
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
VCB = 50 V; IE = 0
VCE = 30 V; IB = 0
VCE = 30 V; IB = 0; Tj = 150 °C
VEB = 5 V; IC = 0
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 µA; VCE = 5 V
IC = 5 mA; VCE = 0.3 V
RR-----21--
resistor ratio
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
MIN.
−
−
−
−
60
−
−
2.5
15.4
TYP.
−
−
−
−
−
−
1.1
1.7
22
MAX.
100
1
50
180
−
150
0.8
−
28.6
UNIT
nA
µA
µA
µA
mV
V
V
kΩ
0.8 1
1.2
2.5 pF
2003 Oct 08
4
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