NXP Semiconductors
PEMD15; PUMD15
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ
103
hFE
102
10
006aaa213
(2) (1)
(3)
−1
VCEsat
(V)
−10−1
006aaa214
(2) (1)
(3)
1
−10−1
−1
−10
−102
IC (mA)
VCE = −5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 5. TR2 (PNP): DC current gain as a function of
collector current; typical values
−10
006aaa215
−10−2
−1
−10
−102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 6.
TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
−10
006aaa216
VI(on)
(V)
(1)
(2)
−1
(3)
VI(off)
(V)
(1)
−1
(2)
(3)
−10−1
−10−1
−1
−10
−102
IC (mA)
VCE = −0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. TR2 (PNP): On-state input voltage as a
function of collector current; typical values
−10−1
−10−2
−10−1
−1
−10
IC (mA)
VCE = −5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 8. TR2 (PNP): Off-state input voltage as a
function of collector current; typical values
PEMD15_PUMD15_3
Product data sheet
Rev. 03 — 2 September 2009
© NXP B.V. 2009. All rights reserved.
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