PEMD30 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMD30 Datasheet PDF : 11 Pages
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Philips Semiconductors
PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
-
IO
output current
-
ICM
peak collector current
single pulse;
-
tp ≤ 1 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
[1] -
SOT666
[1][2] -
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
[1] -
SOT666
[1][2] -
Tstg
storage temperature
−65
Tj
junction temperature
-
Tamb
ambient temperature
−65
50
V
50
V
5
V
100
mA
100
mA
200
mW
200
mW
300
mW
300
mW
+150
°C
150
°C
+150
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
Rth(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
Conditions
in free air
in free air
Min Typ Max Unit
[1] -
-
625 K/W
[1][2] -
-
625 K/W
[1] -
-
416 K/W
[1][2] -
-
416 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMD30_PUMD30_1
Product data sheet
Rev. 01 — 31 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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