PEMD30 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMD30 Datasheet PDF : 11 Pages
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Philips Semiconductors
PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
collector-emitter cut-off VCE = 30 V; IB = 0 A
current
VCE = 30 V; IB = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off
VEB = 5 V; IC = 0 A
current
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 20 mA
IC = 10 mA; IB = 0.5 mA
R1
bias resistor 1 (input)
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
TR1 (NPN)
TR2 (PNP)
Min Typ Max Unit
-
-
100 nA
-
-
1
µA
-
-
50 µA
-
-
100 nA
30 -
-
-
-
150 mV
1.54 2.2 2.86 kΩ
-
-
2.5 pF
-
-
3
pF
PEMD30_PUMD30_1
Product data sheet
Rev. 01 — 31 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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