PEMD30 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMD30 Datasheet PDF : 11 Pages
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Philips Semiconductors
PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
500
hFE
(1)
400
(2)
300
200
(3)
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100
0
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values
500
hFE
400
(1)
006aaa691
300
(2)
200
(3)
100
0
−10−1
−1
−10
−102
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 3. TR2 (PNP): DC current gain as a function of
collector current; typical values
1
VCEsat
(V)
10−1
(1)
(2)
(3)
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10−2
10−1
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
−1
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VCEsat
(V)
−10−1
(1)
(2)
(3)
−10−2
−10−1
−1
−10
−102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 4. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
PEMD30_PUMD30_1
Product data sheet
Rev. 01 — 31 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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