NXP Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
Product data sheet
PEMD4; PUMD4
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• Low current peripheral driver
• Replacement for general purpose transistors in digital
applications
• Control of IC inputs.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCEO
collector-emitter
voltage
IO
output current (DC)
TR1
NPN
TR2
PNP
R1
bias resistor
R2
open
TYP.
−
−
−
−
10
−
MAX. UNIT
50 V
100 mA
−
−
−
−
−
kΩ
−
−
DESCRIPTION
NPN/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE
NUMBER
PEMD4
PUMD4
PACKAGE
PHILIPS
SOT666
SOT363
EIAJ
SC-88
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE
23
D*4
PNP/PNP
COMPLEMENT
PEMB4
PUMB4
NPN/NPN
COMPLEMENT
PEMH4
PUMH4
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER
PEMD4
PUMD4
SIMPLIFIED OUTLINE AND SYMBOL
handbook, halfpage
6
5
4
1
2
3
Top view
6
TR1
1
5
4
R1
TR2
R1
2
3
MDB814
PINNING
PIN DESCRIPTION
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
2003 Oct 10
2