PEMD48(2010) View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

PEMD48
(Rev.:2010)

NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ

NXP Semiconductors. 

NXP Semiconductors

PEMD48; PUMD48

NPN/PNP resistor-equipped transistors

7. Characteristics

Table 8. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Per transistor; for the PNP transistor with negative polarity

ICBO

collector-base

cut-off current

VCB = 50 V;

-

IE = 0 A

ICEO

collector-emitter

VCE = 30 V;

-

cut-off current

IB = 0 A

VCE = 30 V;

-

IB = 0 A;

Tj = 150 °C

Transistor TR1 (NPN)

IEBO

emitter-base

VEB = 5 V;

-

cut-off current

IC = 0 A

hFE

DC current gain

VCE = 5 V;

80

IC = 5 mA

VCEsat

collector-emitter

IC = 10 mA;

-

saturation voltage

IB = 0.5 mA

VI(off)

off-state input voltage

VCE = 5 V;

-

IC = 100 μA

VI(on)

on-state input voltage

VCE = 0.3 V;

3

IC = 2 mA

R1

bias resistor 1 (input)

33

R2/R1

bias resistor ratio

0.8

Cc

collector capacitance

VCB = 10 V;

-

IE = ie = 0 A;

f = 1 MHz

Transistor TR2 (PNP)

IEBO

hFE

VCEsat

VI(off)

VI(on)

R1

emitter-base

cut-off current

DC current gain

collector-emitter

saturation voltage

off-state input voltage

on-state input voltage

bias resistor 1 (input)

VEB = −5 V;

IC = 0 A

VCE = −5 V;

IC = −10 mA

IC = −5 mA;

IB = −0.25 mA

VCE = −5 V;

IC = −100 μA

VCE = −0.3 V;

IC = −5 mA

-

100

-

-

−1.1

1.54

R2/R1

bias resistor ratio

17

Cc

collector capacitance

VCB = −10 V;

-

IE = ie = 0 A;

f = 1 MHz

Typ Max Unit

-

100 nA

-

1

μA

-

50

μA

-

90

μA

-

-

-

150 mV

1.2 0.8 V

1.6 -

V

47

61

kΩ

1

1.2

-

2.5 pF

-

−180 μA

-

-

-

−100 mV

−0.6 −0.5 V

−0.75 -

V

2.2 2.86 kΩ

21

26

-

3

pF

PEMD48_PUMD48_5

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 05 — 13 April 2010

© NXP B.V. 2010. All rights reserved.

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