NXP Semiconductors
PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
103
hFE
102
10
mhc007
(2)
(1)
(3)
10−1
VCEsat
(V)
mhc006
(1)
(2)
(3)
1
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values
102
VI(on)
(V)
10
mhc008
(1)
1
(3) (2)
10−120−1
1
10 IC (mA) 102
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2.
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
10
mhc009
VI(off)
(V)
(1)
1
(2)
(3)
10−1
10−1
1
10
102
IC (mA)
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. TR1 (NPN): On-state input voltage as a
function of collector current; typical values
10−1
10−2
10−1
1
10
IC (mA)
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. TR1 (NPN): Off-state input voltage as a
function of collector current; typical values
PEMD48_PUMD48_5
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 13 April 2010
© NXP B.V. 2010. All rights reserved.
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