PUMD48,165 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PUMD48,165
NXP Semiconductors.
PUMD48,165 Datasheet PDF : 17 Pages
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NXP Semiconductors
PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base
VCB = 50 V; IE = 0 A
-
cut-off current
ICEO
collector-emitter
VCE = 30 V; IB = 0 A
-
cut-off current
VCE = 30 V; IB = 0 A;
-
Tj = 150 C
Transistor TR1 (NPN)
IEBO
emitter-base
VEB = 5 V; IC = 0 A
-
cut-off current
hFE
DC current gain
VCE = 5 V; IC = 5 mA
80
VCEsat collector-emitter
IC = 10 mA; IB = 0.5 mA
-
saturation voltage
VI(off)
off-state input voltage VCE = 5 V; IC = 100 A
-
VI(on)
on-state input voltage VCE = 0.3 V; IC = 2 mA
3
R1
bias resistor 1 (input)
33
R2/R1 bias resistor ratio
0.8
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
-
f = 1 MHz
fT
transition frequency
VCB = 5 V; IC = 10 mA;
[1] -
f = 100 MHz
Transistor TR2 (PNP)
IEBO
emitter-base
VEB = 5 V; IC = 0 A
-
cut-off current
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 10 mA
100
IC = 5 mA; IB = 0.25 mA -
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = 5 V; IC = 100 A
VCE = 0.3 V; IC = 5 mA
-
1.1
1.54
R2/R1 bias resistor ratio
17
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
-
f = 1 MHz
fT
transition frequency
VCB = -5 V; IC = -10 mA; [1] -
f = 100 MHz
Typ Max Unit
-
100 nA
-
1
A
-
5
A
-
90 A
-
-
-
150 mV
1.2 0.8 V
1.6 -
V
47 61 k
1.0 1.2
-
2.5 pF
230 -
MHz
-
180 A
-
-
-
100 mV
0.6 0.5 V
0.75 -
V
2.20 2.86 k
21 26
-
3
pF
180 -
MHz
[1] Characteristics of built-in transistor.
PEMD48_PUMD48
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 24 January 2012
© NXP B.V. 2012. All rights reserved.
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