NXP Semiconductors
Double ESD protection diodes
in SOT23 package
Product data sheet
PESDxS2UAT series
FEATURES
• Unidirectional ESD protection of up to two lines
• Common-cathode configuration
• Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs
• Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A
• Ultra-low reverse leakage current: IRM < 700 nA
• ESD protection > 30 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.
APPLICATIONS
• Computers and peripherals
• Communication systems
• Audio and video equipment
• Data lines
• CAN bus protection.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VALUE
UNIT
VRWM
reverse stand-off 3.3, 5, 12, 15 V
voltage
and 24
Cd
diode capacitance 207, 152, 38, 32 pF
VR = 0 V;
and 23
f = 1 MHz
number of
2
protected lines
PINNING
PIN
1
2
3
DESCRIPTION
anode 1
anode 2
common cathode
DESCRIPTION
Unidirectional double ESD protection diodes in common
cathode configuration in the SOT23 plastic package.
Designed to protect up to two transmission or data lines
against damage from ElectroStatic Discharge (ESD) and
other transients.
MARKING
TYPE NUMBER
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
MARKING CODE(1)
*7A
*7B
*7C
*7D
*7E
Note
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
1
3
2
001aaa401
1
3
2
sym002
Fig.1 Simplified outline (SOT23) and symbol.
2004 Feb 18
2