NXP Semiconductors
Double ESD protection diodes
in SOT23 package
10
IR
IR(25˚C)
1
001aaa270
(1)
10−1
−100
−50
0
50
100
150
Tj (°C)
(1) PESD3V3S2UAT; VRWM = 3.3 V.
PESD5V0S2UAT; VRWM = 5 V.
IR is less than 10 nA at 150 °C for:
PESD12V52UAT; VRWM = 12 V.
PESD15VS2UAT; VRWM = 15 V.
PESD24VS2UAT; VRWM = 24 V.
Fig.8 Relative variation of reverse leakage
current as a function of junction
temperature; typical values.
Product data sheet
PESDxS2UAT series
2004 Feb 18
8