PUMH1 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PUMH1 Datasheet PDF : 15 Pages
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NXP Semiconductors
PEMH1; PUMH1
NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
collector-base voltage open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
-
VI
input voltage
positive
-
negative
-
IO
output current
-
ICM
peak collector current
single pulse;
-
tp 1 ms
Ptot
total power dissipation Tamb 25 C
PEMH1 (SOT666)
[1][2] -
PUMH1 (SOT363)
[1] -
Per device
Ptot
total power dissipation Tamb 25 C
PEMH1 (SOT666)
[1][2] -
PUMH1 (SOT363)
[1] -
Tj
junction temperature
-
Tamb
ambient temperature
65
Tstg
storage temperature
65
Max Unit
50
V
50
V
10
V
+40
V
10
V
100
mA
100
mA
200
mW
200
mW
300
mW
300
mW
150
C
+150 C
+150 C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMH1_PUMH1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 2 December 2011
© NXP B.V. 2011. All rights reserved.
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