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PUMH1 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
Manufacturer
PUMH1 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NXP Semiconductors
PEMH1; PUMH1
NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
400
Ptot
(mW)
300
006aac749
200
100
0
-75
-25
25
75
125
175
Tamb (°C)
FR4 PCB, standard footprint
Fig 1. Per device: Power derating curve for SOT363 (SC-88) and SOT666
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
PEMH1 (SOT666)
PUMH1 (SOT363)
Per device
Rth(j-a)
thermal resistance from
junction to ambient
PEMH1 (SOT666)
PUMH1 (SOT363)
Conditions
in free air
in free air
Min Typ Max Unit
[1][2] -
-
625 K/W
[1] -
-
625 K/W
[1][2] -
-
417 K/W
[1] -
-
417 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMH1_PUMH1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 2 December 2011
© NXP B.V. 2011. All rights reserved.
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