PUMH19 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PUMH19 Datasheet PDF : 8 Pages
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NXP Semiconductors
PEMH19; PUMH19
NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 1 mA
IC = 10 mA; IB = 0.5 mA
R1
bias resistor 1 (input)
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
-
-
-
-
-
-
100 -
-
-
15.4 22
-
-
100 nA
1
μA
50 μA
100 nA
-
150 mV
28.6 kΩ
2.5 pF
500
hFE
(1)
400
(2)
300
200
(3)
006aaa172
103
VCEsat
(mV)
102
006aaa173
(2) (1)
(3)
100
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
10
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PEMH19_PUMH19_3
Product data sheet
Rev. 03 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
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