PEMB14 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMB14 Datasheet PDF : 10 Pages
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NXP Semiconductors
PEMB14; PUMB14
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
VCEO
VEBO
IO
ICM
Ptot
collector-base voltage
open emitter
-
collector-emitter voltage
open base
-
emitter-base voltage
open collector
-
output current (DC)
-
peak collector current
-
total power dissipation
Tamb ≤ 25 °C
SOT363
[1] -
SOT666
[1] [2] -
Tstg
storage temperature
−65
Tj
junction temperature
-
Tamb
ambient temperature
−65
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
[1] -
SOT666
[1] [2] -
Max Unit
−50
V
−50
V
−5
V
−100 mA
−100 mA
200
mW
200
mW
+150 °C
150
°C
+150 °C
300
mW
300
mW
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
Rth(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
Conditions
Tamb ≤ 25 °C
Tamb ≤ 25 °C
Min Typ Max Unit
[1] -
-
625 K/W
[1] [2] -
-
625 K/W
[1] -
-
416 K/W
[1] [2] -
-
416 K/W
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMB14_PUMB14_2
Product data sheet
Rev. 02 — 31 August 2009
© NXP B.V. 2009. All rights reserved.
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