PHX3N50E View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

PHX3N50E

PowerMOS transistors Avalanche energy rated

Philips Electronics 

Philips Semiconductors

PowerMOS transistors

Avalanche energy rated

Product specification

PHX3N50E

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

IS

Continuous source current Ths = 25˚C

(body diode)

ISM

Pulsed source current (body Ths = 25˚C

diode)

VSD

Diode forward voltage

IS = 3.4 A; VGS = 0 V

trr

Reverse recovery time

IS = 3.4 A; VGS = 0 V; dI/dt = 100 A/µs

Qrr

Reverse recovery charge

MIN. TYP. MAX. UNIT

-

- 3.4 A

-

- 14 A

-

- 1.2 V

- 370 - ns

- 2.7 - µC

December 1998

3

Rev 1.200

Share Link: