PI3033B View Datasheet(PDF) - AMI Semiconductor
Part Name
Description
Manufacturer
PI3033B Datasheet PDF : 13 Pages
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Preliminary PI3033B datasheet
Operating Humidity
Storage Temperature
Storage Humidity
Hop
10 to 85
Tstg
-25 to 75
Hstg
10 to 90
Table 3. Absolute Maximum Ratings
RH %
oC
RH %
Recommended Operating Conditions at Room Temperature
Parameters
Symbol Min. Typical Max.
Units
Power Supply
Input clock pulses high level
VDD
Vih (1)
4.5
5.0
3.0
5.0
5.5
VDD
Volts
Volts
Input clock pulse low level
Vil (1)
0
0
0.8
Volts
Operating high level exposed output IOUT (2)
Clock Frequency
Fclk (3)
0.1
See note.
2.0
5.0
MHz
Clock pulse duty cycle
Duty (4)
25
%
Clock pulse high durations
tw
0.125
µsec
Integration time
Tint
0.864
10
ms
Operating Temperature
Top
25
50
oC
Table 4. Recommended Operating Condition at Room Temperature
Note (1)
(2)
(3)
(4)
Applies to both CP and SP.
The output is a current that is proportional to the charges, which are
integrated on the phototransistor’s base via photon-to-electron conversion.
For its conversion to voltage pixels see Figure 4, Video Pixel Output in section
Output Circuit Of The Image Sensor.
Although the clock frequency, Fclk, will operate the device at less than
100KHz, it is recommended that the device be operated above 500KHz to
avoid complication of leakage current build-up. In applications using long CIS
module length, such as an array of image sensor > 27, increases the readout
time, i.e., increases Tint, hence, leakage current build-up occurs.
The clock duty cycle typically is normally set to 25 %. However, it can operate
with duty cycle as large as 50 %, which will allow more reset time at the
expense of video pixel readout time.
Page 9 of 13 Date: 03/18/05
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