PJ32 View Datasheet(PDF) - InterFET

Part Name

Description

Manufacturer

PJ32

Silicon Junction Field-Effect Transistor

InterFET  

F-20

PJ32 Process

Silicon Junction Field-Effect Transistor

¥ General Purpose Amplifier

Absolute maximum ratings at TA = 25¡C

Gate Current, Ig

10 mA

Operating Junction Temperature, Tj

+150°C

Storage Temperature, Ts

– 65°C to +175°C

Devices in this Databook based on the PJ32 Process.

Datasheet

2N5020, 2N5021

2N5460, 2N5461

2N5462

01/99

G

S-D

S-D

G

Die Size = 0.018" X 0.018"

All Bond Pads = 0.004" Sq.

Substrate is also Gate.

At 25°C free air temperature:

Static Electrical Characteristics

Gate Source Breakdown Voltage

Reverse Gate Leakage Current

Drain Saturation Current (Pulsed)

Gate Source Cutoff Voltage

Dynamic Electrical Characteristics

Forward Transconductance

Input Capacitance

Feedback Capacitance

Equivalent Noise Voltage

PJ32 Process

Min Typ Max Unit

Test Conditions

V(BR)GSS

30

IGSS

IDSS

–1

VGS(OFF)

0.5

50

V IG = 1 µA, VDS = Ø

1

2

nA VGS = 15V, VDS = Ø

– 15 mA VDS = – 15V, VGS = Ø

7

V VDS = – 15V, ID = 1 nA

gfs

2.5

mS VDS = – 15V, VGS = Ø

f = 1 kHz

Ciss

3.2

pF VDS = Ø, VGS = 10

f = 1 MHz

Crss

1.7

pF VDS = Ø, VGS = 10

f = 1 MHz

e¯N

10

nV/√HZ VDS = 10V, VGS = Ø

f = 1 Hz

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

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