PM6670 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

PM6670

Complete DDR2/3 memory power supply controller

STMicroelectronics 

Electrical characteristics

PM6670

Table 6. Electrical characteristics (continued)

Symbol

Parameter

Test condition

VDDQ output

VVDDQ

VDDQ output voltage, DDR3

VDDQ output voltage, DDR2

Feedback Accuracy

MODE connected to AVCC,

DDRSEL tied to SGND, No Load

MODE and DDRSEL connected to

AVCC, No Load

Current limit and zero crossing comparator

ICSNS CSNS input bias current

Comparator offset

Rsense = 1kΩ

Positive current limit threshold VPGND - VCSNS

Fixed negative current limit

threshold

VZC,OFFS

Zero crossing comparator

offset

High and low side gate drivers

HGATE driver on-resistance

LGATE driver on-resistance

HGATE high state (pull-up)

HGATE low state (pull-down)

LGATE high state (pull-up)

LGATE low state (pull-down)

UVP/OVP protections and PGOOD SIGNAL (SMPS only)

OVP Over voltage threshold

UVP Under voltage threshold

Power-good upper threshold

PGOOD

Power-good lower threshold

IPG,LEAK PG leakage current

VPG,LOW PG low-level voltage

Soft start section (SMPS)

PG forced to 5V

IPG,SINK = 4mA

Soft-start ramp time (4 steps

current limit)

Soft-start current limit step

Values

Unit

Min Typ Max

1.5

V

1.8

-1.5

1.5

%

90 100 110 µA

-5

5

mV

-100

mV

110

mV

-10

-5

0

mV

2.0

3

1.8

2.7

Ω

1.4

2.1

0.6

0.9

112 115 118

67

70

73

%

107 110 113

86

90

93

1

µA

150 250 mV

2

3

4

ms

25

µA

10/53

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