PMBT3906YS View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

PMBT3906YS

40 V, 200 mA PNP/PNP general-purpose double transistor

NXP Semiconductors. 

NXP Semiconductors

PMBT3906YS

40 V, 200 mA PNP/PNP general-purpose double transistor

−1

VCEsat

(V)

(1)

−10−1

(2)

(3)

006aab122

−10−2

−10−1

−1

−10

−102

−103

IC (mA)

IC/IB = 10

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig 7. Collector-emitter saturation voltage as a function of collector current; typical

values

8. Test information

VBB

VCC

(probe)

oscilloscope

450 Ω

VI

RB

R2

R1

Fig 8. Test circuit for switching times

RC

Vo (probe)

oscilloscope

450 Ω

DUT

mgd624

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

PMBT3906YS_2

Product data sheet

Rev. 02 — 13 May 2009

© NXP B.V. 2009. All rights reserved.

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