T200EN View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
T200EN Datasheet PDF : 13 Pages
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NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
7
ID
(A)
6
5
4
aaa-005465
2.5
a
2.0
1.5
aaa-005466
3
1.0
2
Tj = 150 °C
Tj = 25 °C
0.5
1
0
0
1
2
VDS > ID × RDSon
3
4
VGS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.0
-60
0
60
120
180
Tj (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
3
VGS(th)
(V)
2
1
aaa-005467
max
typ
min
103
C
(pF)
102
Ciss
aaa-005468
Coss
Crss
0
-60
0
60
ID = 0.25 mA; VDS = VGS
120
180
Tj (°C)
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
10
10-1
1
f = 1 MHz; VGS = 0 V
10
102
VDS (V)
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMT200EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 October 2012
© NXP B.V. 2012. All rights reserved
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