PSMN005-30K View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PSMN005-30K Datasheet PDF : 12 Pages
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Philips Semiconductors
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tj = 25 to 150 °C
Tsp = 80 °C
Tsp = 80 °C
VGS = 10 V; ID = 15 A; Tj = 25 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
drain-source voltage (DC)
Tj = 25 to 150 °C
VGS
gate-source voltage (DC)
ID
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tsp = 80 °C; VGS = 10V
Tsp = 25 °C; pulsed; tp ≤ 10 µs
Tsp = 80 °C
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
IS
source (diode forward) current (DC) Tsp = 80 °C
ISM
peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs
PSMN005-30K
TrenchMOS™ logic level FET
Typ
Max Unit
-
30
V
-
20
A
-
3.5
W
-
150
°C
4.4
5.5
mΩ
Min
Max Unit
-
30
V
-
±20
V
-
20
A
-
60
A
-
3.5
W
−55
+150 °C
−55
+150 °C
-
20
A
-
60
A
9397 750 09334
Product data
Rev. 01 — 6 March 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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