PTB20105 View Datasheet(PDF) - Ericsson
Part Name
Description
Manufacturer
PTB20105 Datasheet PDF : 3 Pages
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PTB 20105
20 Watts, 925–960 MHz
Cellular Radio RF Power Transistor
Description
The 20105 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Output Power vs. Input Power
25
20
15
10
VCC = 25 V
5
ICQ = 0.100 A
f = 960 MHz
0
0
1
2
3
4
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Class AB Characteristics
Performance at 960 MHz, 25 VCC
- Output Power = 20 W
- Efficiency = 50% Min
Gold Metallization
Silicon Nitride Passivated
20105 LOT CODE
Package 20201
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
40
50
4.0
5.0
70
0.4
–40 to +150
2.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
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