PUMX2 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PUMX2 Datasheet PDF : 8 Pages
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Philips Semiconductors
PUMX2
NPN/NPN general-purpose double transistors
6. Thermal characteristics
Table 6: Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
in free air
Min Typ Max
[1] -
-
694
[1] -
-
417
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
K/W
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base
VCB = 60 V; IE = 0 A
cut-off current
VCB = 60 V; IE = 0 A;
Tj = 150 °C
IEBO
emitter-base
VEB = 7 V; IC = 0 A
cut-off current
hFE
VCEsat
DC current gain VCE = 6 V; IC = 1 mA
collector-emitter IC = 50 mA; IB = 5 mA
saturation voltage
fT
transition
VCE = 12 V; IE = 2 mA;
frequency
f = 100 MHz
Cc
collector
VCB = 12 V; IE = ie = 0 A;
capacitance
f = 1 MHz
Min Typ Max Unit
-
-
100 nA
-
-
50
µA
-
-
100 nA
120 250 560
-
-
250 mV
100 -
-
MHz
-
-
3
pF
PUMX2_1
Product data sheet
Rev. 01 — 10 November 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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