PEMD13 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMD13 Datasheet PDF : 8 Pages
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NXP Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
Product data sheet
PEMD13; PUMD13
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Per transistor
Rth j-a
thermal resistance from junction to ambient
SOT363
SOT666
Per device
Rth j-a
thermal resistance from junction to ambient
SOT363
SOT666
CONDITIONS
Tamb ≤ 25 °C
note 1
notes 1 and 2
Tamb ≤ 25 °C
note 1
notes 1 and 2
VALUE
625
625
416
416
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
UNIT
K/W
K/W
K/W
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per transistor; for the PNP transistor with negative polarity
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
VCB = 50 V; IE = 0
VCE = 30 V; IB = 0
VCE = 30 V; IB = 0; Tj = 150 °C
VEB = 5 V; IC = 0
VCE = 5 V; IC = 10 mA
IC = 5 mA; IB = 0.25 mA
IC = 100 μA; VCE = 5 V
IC = 5 mA; VCE = 0.3 V
R-----2--
R1
resistor ratio
Cc
collector capacitance
TR1 (NPN)
TR2 (PNP)
IE = ie = 0; VCB = 10 V; f = 1 MHz
MIN. TYP. MAX. UNIT
−
−
−
−
−
−
−
−
100 −
−
−
−
0.6
1.3 0.9
3.3 4.7
8
10
100 nA
1
μA
50
μA
170 μA
−
100 mV
0.5 V
−
V
6.1 kΩ
12
−
−
2.5 pF
−
−
3
pF
2003 Oct 08
4
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