NXP Semiconductors
NPN/NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
Product data sheet
PEMH13; PUMH13
FEATURES
• Built-in bias resistors
• Simplifies circuit design
• Reduces component count
• Reduces pick and place costs.
APPLICATIONS
• Low current peripheral driver
• Replacement of general purpose transistors in digital
applications
• Control of IC inputs.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCEO
collector-emitter
voltage
IO
output current (DC)
TR1
NPN
TR2
NPN
R1
bias resistor
R2
bias resistor
TYP.
−
−
−
−
4.7
47
MAX. UNIT
50 V
100 mA
−
−
−
−
−
kΩ
−
kΩ
DESCRIPTION
NPN/NPN resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PEMH13
PUMH13
PACKAGE
PHILIPS
SOT666
SOT363
EIAJ
−
SC-88
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE
21
H0*(1)
PNP/PNP
COMPLEMENT
PEMB13
PUMB13
NPN/PNP
COMPLEMENT
PEMD13
PUMD13
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER
PEMH13
PUMH13
SIMPLIFIED OUTLINE AND SYMBOL
handbook, half6page
5
1
2
Top view
6
5
4
4
TR1
3
1
MHC650
R1 R2
R2 R1
2
TR2
3
PINNING
PIN DESCRIPTION
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
2004 Apr 14
2