NXP Semiconductors
PEMH18; PUMH18
NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k
400
Ptot
(mW)
300
006aac749
200
100
0
-75
-25
25
75
125
175
Tamb (°C)
FR4 PCB, standard footprint
Fig 1. Per device: Power derating curve for SOT363 (SC-88) and SOT666
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
PEMH18 (SOT666)
PUMH18 (SOT363)
Per device
Rth(j-a)
thermal resistance from
junction to ambient
PEMH18 (SOT666)
PUMH18 (SOT363)
Conditions
in free air
in free air
Min Typ Max Unit
[1][2] -
-
625 K/W
[1] -
-
625 K/W
[1][2] -
-
417 K/W
[1] -
-
417 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMH18_PUMH18
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 19 December 2011
© NXP B.V. 2011. All rights reserved.
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