PUMH18 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PUMH18 Datasheet PDF : 14 Pages
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NXP Semiconductors
PEMH18; PUMH18
NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k
7. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
-
-
100 nA
ICEO
collector-emitter cut-off VCE = 30 V; IB = 0 A
current
VCE = 30 V; IB = 0 A;
Tj = 150 C
IEBO
emitter-base cut-off
VEB = 5 V; IC = 0 A
current
-
-
1
A
-
-
5
A
-
-
600 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 10 mA
50
-
IC = 10 mA; IB = 0.5 mA
-
-
-
100 mV
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = 5 V; IC = 100 A
VCE = 0.3 V; IC = 20 mA
-
0.9 0.3 V
2.5 1.5 -
V
3.3 4.7 6.1 k
R2/R1 bias resistor ratio
1.7 2.1 2.6
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
-
-
2.5 pF
f = 1 MHz
fT
transition frequency
VCE = 5 V; IC = 10 mA; [1] -
230 -
MHz
f = 100 MHz
[1] Characteristics of built-in transistor
PEMH18_PUMH18
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 19 December 2011
© NXP B.V. 2011. All rights reserved.
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