PEMH30,115 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMH30,115 Datasheet PDF : 10 Pages
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Philips Semiconductors
PEMH30; PUMH30
NPN/NPN double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max Unit
Per transistor
VCBO
collector-base voltage
VCEO
collector-emitter voltage
VEBO
IO
emitter-base voltage
output current
ICM
peak collector current
Ptot
total power dissipation
SOT363
SOT666
Per device
Ptot
total power dissipation
SOT363
SOT666
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
open emitter
open base
open collector
single pulse;
tp ≤ 1 ms
Tamb ≤ 25 °C
Tamb ≤ 25 °C
-
-
-
-
-
[1] -
[1][2] -
[1] -
[1][2] -
-
−65
−65
50
V
50
V
5
V
100
mA
100
mA
200
mW
200
mW
300
mW
300
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
Rth(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
Conditions
Min Typ Max Unit
in free air
[1] -
-
625 K/W
[1][2] -
-
625 K/W
in free air
[1] -
-
416 K/W
[1][2] -
-
416 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMH30_PUMH30_1
Product data sheet
Rev. 01 — 28 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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