PEMH30,115 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMH30,115 Datasheet PDF : 10 Pages
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Philips Semiconductors
PEMH30; PUMH30
NPN/NPN double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
-
-
100 nA
ICEO
collector-emitter cut-off VCE = 30 V; IB = 0 A
-
-
1
µA
current
VCE = 30 V; IB = 0 A;
-
-
50
µA
Tj = 150 °C
IEBO
emitter-base cut-off
VEB = 5 V; IC = 0 A
current
-
-
100 nA
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 20 mA
30
-
IC = 10 mA; IB = 0.5 mA -
-
-
150 mV
R1
bias resistor 1 (input)
1.54 2.2 2.86 kΩ
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A; -
-
2.5
pF
f = 1 MHz
500
hFE
(1)
400
(2)
300
200
(3)
006aaa696
100
0
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
1
VCEsat
(V)
10−1
(1)
(2)
(3)
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10−2
10−1
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PEMH30_PUMH30_1
Product data sheet
Rev. 01 — 28 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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