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PUMB10 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
Manufacturer
PUMB10 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NXP Semiconductors
PNP/PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
Product data sheet
PEMB10; PUMB10
ORDERING INFORMATION
TYPE NUMBER
PEMB10
PUMB10
NAME
PACKAGE
DESCRIPTION
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
VERSION
SOT666
SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Per transistor
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
IO
output current (DC)
ICM
peak collector current
Ptot
total power dissipation
SOT363
SOT666
Tstg
Tj
Tamb
storage temperature
junction temperature
operating ambient temperature
Per device
Ptot
total power dissipation
SOT363
SOT666
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C
note 1
notes 1 and 2
Tamb 25 °C
note 1
notes 1 and 2
MIN.
65
65
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
MAX.
50
50
10
+5
12
100
100
200
200
+150
150
+150
300
300
UNIT
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
mW
mW
2003 Oct 03
3

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