BAT14-099R View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BAT14-099R

Silicon Crossover Ring Quad Schottky Diode

Siemens AG 

BAT 14-099R

Electrical Characteristics per Diode

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Forward voltage

VF

IF = 1 mA

IF = 10 mA

Forward voltage matching1)

∆VF

IF = 10 mA

Diode capacitance

CT

VR = 0, f= 1 MHz

Forward resistance

RF

IF = 10 mA / 50 mA

min.

–

–

–

–

–

Values

Unit

typ.

max.

V

0.4

–

0.48

–

–

20

mV

0.38

–

pF

5.5

–

Ω

Forward current IF = f (VF)

Forward current IF = f (TS; TA*)

*Package mounted on alumina

1) ∆VF is the difference between the lowest and the highest VF in the component.

Semiconductor Group

2

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