BTS7751G View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BTS7751G

TrilithIC

Infineon Technologies 

BTS 7751 G

3.3 Electrical Characteristics (cont’d)

ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V

unless otherwise specified

Parameter

Symbol Limit Values Unit Test Condition

min. typ. max.

Switching times of low-side switch

Turn ON time to 10% VDL tON

VIL = 0 to 10 V

–

65 150 µs

Turn OFF time;

to 90% VDL

tOFF

–

55 150 µs

Slew rate on 70 to 50% VSH -dV/dtON –

–

1.5 V/µs

VIL = 0 to 10 V

Slew rate off 50 to 70% VSH dV/dtOFF –

–

1.5 V/µs

VIL = 0 to 10 V

Note: switching times are not subject to produvtion tests - specified by design

RLoad = 10 Ω

VS = 12 V

RLoad = 10 Ω

VS = 12 V

RLoad = 4.7 Ω

VS = 12 V

RLoad = 4.7 Ω

VS = 12 V

Control Inputs of high-side switches GH 1, 2

H-input voltage

L-input voltage

Input voltage hysteresis

H-input current

L-input current

Input series resistance

Zener limit voltage

VIH High

–

–

2.5 V –

VIH Low

1

–

–

V–

VIH HY

–

0.3 –

V–

IIH High

15

30

60

µA VIH = 5 V

IIH Low

5

–

20 µA VIH = 0.4 V

RI

2.7 4

5.5 kΩ –

VIH Z

5.4 –

–

V

IIH = 1.6 mA

Control Inputs GL1, 2

Gate-threshold-voltage

VIL th

0.9 1.7 2.2 V IDL = 2 mA

Note: The listed characteristics are ensured over the operating range of the integrated

circuit. Typical characteristics specify mean values expected over the production

spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and

the given supply voltage.

Data Sheet

12

2003-03-06

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