QSE213 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

QSE213

Plastic Silicon Infrared Phototransistor

Fairchild Semiconductor 

Absolute Maximum Ratings (TA = 25°C unless otherwise specified)

Parameter

Symbol

Rating

Operating Temperature

Storage Temperature

Soldering Temperature (Iron)(2,3,4)

Soldering Temperature (Flow)(2,3)

Collector-Emitter Voltage

Emitter-Collector Voltage

Power Dissipation(1)

TOPR

T STG

TSOL-I

TSOL-F

V CE

V EC

PD

-40 to +100

-40 to +100

240 for 5 sec

260 for 10 sec

30

5

100

Unit

°C

°C

°C

°C

V

V

mW

Electrical/Optical Characteristics (TA =25°C unless otherwise specified)

Parameter

Test Conditions

Symbol Min Typ Max Units

Peak Sensitivity

Reception Angle

λPS

—

880

—

nM

Q

—

±25

— Deg.

Collector Emitter Dark Current

Collector Emitter Breakdown

Emitter Collector Breakdown

On-State Collector Current

Saturation Voltage

Rise Time

Fall Time

VCE = 10 V, Ee = 0

ID

—

—

100

nA

IC = 1 mA

BV CEO

30

—

—

V

IE = 100 µA

Ee = 0.5 mW/cm2, VCE = 5 V

BV ECO

5

(QSE213)

I C(ON)

0.2

—

—

V

— 1.50 mA

(QSE214)

1.00 —

—

VCE = 5 V(5), Ee = 0.5 mW/cm2, IC = 0.1 mA(5) VCE(SAT) —

—

0.4

V

VCC = 5V, RL = 100Ω, IC = 1mA

tr

—

8

—

µs

tf

—

8

—

Notes:

1. Derate power dissipation linearly 1.33 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16" (1.6 mm) minimum from housing.

5. λ = 950 nm GaAs.

2

QSE213/QSE214 Rev. 1.0.0

www.fairchildsemi.com

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