R2A20124ASP-W0 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

R2A20124ASP-W0

Synchronous Phase Shift Full-Bridge Control IC Series

Renesas Electronics 

R2A20124AFP/R2A20124ASP

Preliminary

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Note

Power supply voltage

Vcc

20

V

1

Peak output current

Ipk-out

200

mA

2, 3

DC output current

Idc-out

50

mA

3, 4

VREF output current

Iref-out

–20

mA

3

COMP sink current

Isink-comp

2

mA

3

DELAY set current

Iset-delay

0.3

mA

3

RT set current

Iset-rt

0.3

mA

3

RAMP-SLP set current

Iset-ramp-slp

0.3

mA

3

VREF terminal voltage

Vter-ref

–0.3 to +6

V

1, 5

Terminal group 1 voltage

Vter-1

–0.3 to (Vref + 0.3)

V

1, 6

Operating junction temperature

Tj-opr

–40 to +125

°C

7

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. Rated voltages are with reference to the GND or SGND pin.

2. The Rating shows the transient current when driving a capacitive load.

3. For rated currents, inflow to the IC is indicated by (+), and outflow by (–).

4. Total current of OUT-A, Out-B, OUT-C, OUT-D, OUT-E, and OUT-F must be not exceed 90 mA.

5. VREF pin voltage must not exceed VCC pin voltage.

6. Terminal group 1 is defined the pins;

REMOTE, RAMP-SLP, SEC-CONT, CS, RAMP, COMP, CS-OUT, FB(–), SS, RT, SYNC, and DELAY-1 to 3

7. Theramal resistance ja

R2A20124AFP (40-pin); 85.3°C/W Board condition; Glass epoxy 50 mm  50 mm  1.6 mm, 10% wiring density.

R2A20124ASP (20-pin); 120°C/W Board condition; Glass epoxy 40 mm  40 mm  1.6 mm, 10% wiring density.

R03DS0031EJ0300 Rev.3.00

Mar 11, 2011

Page 7 of 12

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