RD12MVP1 View Datasheet(PDF) - Mitsumi
Part Name
Description
Manufacturer
RD12MVP1 Datasheet PDF : 9 Pages
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< Silicon RF Power MOS FET (Discrete) >
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
60
*PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm)
Thermal sheet: GELTEC COOH-4000(t=0.5mm)
50
40
30
On PCB with Termal sheet
and Heat-sink
(Size : 41 x 55mm, t=7.2 mm)
20
10
Free Air
0
0
40
80 120 160 200
AMBIENT TEMPERATURE Ta(deg:C.)
Vgs-Ids CHARACTERISTICS
7
Ta=+25°C
6
Vds=10V
Ids
5
4
3
2
1
0
0 12 3 4 56 7
Vgs(V)
Vds-Ids CHARACTERISTICS
9
Ta=+25°C
8
Vgs=7.5V
7
6
5
Vgs=6.5V
4
3
Vgs=5.5V
2
1
Vgs=4.5V
0
01234 56789
V ds ( V )
Vds VS. Ciss CHARACTERISTICS
160
140
Ta=+25°C
f=1MHz
120
100
80
60
40
20
0
0
5
10
15
20
Vds(V)
Vds VS. Coss CHARACTERISTICS
160
140
Ta=+25°C
f=1MHz
120
100
80
60
40
20
0
0
5
10
15
20
V ds (V )
Vds VS. Crss CHARACTERISTICS
20
Ta=+25°C
18
f=1MHz
16
14
12
10
8
6
4
2
0
0
5
10
15
20
Vds(V)
Publication Date : Oct．2011
3
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