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REF191 View Datasheet(PDF) - Analog Devices

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Description
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REF191 Datasheet PDF : 28 Pages
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REF19x Series
ELECTRICAL CHARACTERISTICS—REF193 @ TA 40°C +125°C
@ VS = 3.3 V, –40°C ≤ TA ≤ +125°C, unless otherwise noted.
Table 10.
Parameter
Mnemonic
Condition
Min
TEMPERATURE COEFFICIENT1 ,2
G Grade3
TCVO/°C
IOUT = 0 mA
LINE REGULATION4
G Grade
ΔVO/ΔVIN
3.3 V ≤ VS ≤ 15 V, IOUT = 0 mA
LOAD REGULATION4
G Grade
ΔVO/ΔVLOAD
VS = 5.0 V, 0 mA ≤ IOUT ≤ 20 mA
DROPOUT VOLTAGE
VS − VO
VS = 3.8 V, ILOAD = 10 mA
VS = 4.1 V, ILOAD = 20 mA
1 For proper operation, a 1 μF capacitor is required between the output pin and the GND pin of the device.
2 TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/°C.
TCVO = (VMAX VMIN)/VO(TMAX TMIN)
3 Guaranteed by characterization.
4 Line and load regulation specifications include the effect of self-heating.
Typ Max Unit
10
ppm/°C
20
ppm/V
10
ppm/mA
0.80 V
1.10 V
ELECTRICAL CHARACTERISTICS—REF194 @ TA = 25°C
@ VS = 5.0 V, TA = 25°C, unless otherwise noted.
Table 11.
Parameter
INITIAL ACCURACY1
E Grade
F Grade
G Grade
LINE REGULATION2
E Grade
F and G Grades
LOAD REGULATION2
E Grade
F and G Grades
Mnemonic
VO
Condition
IOUT = 0 mA
∆VO/∆VIN
4.75 V ≤ VS ≤ 15 V, IOUT = 0 mA
∆VO/∆VLOAD
VS = 5.8 V, 0 mA ≤ IOUT ≤ 30 mA
DROPOUT VOLTAGE
LONG-TERM STABILITY3
NOISE VOLTAGE
VS − VO
DVO
eN
VS = 5.00 V, ILOAD = 10 mA
VS = 5.8 V, ILOAD = 30 mA
1000 hours @ 125°C
0.1 Hz to 10 Hz
Min Typ
4.498 4.5
4.495
4.490
2
4
2
4
2
45
Max Unit
4.502 V
4.505 V
4.510 V
4
ppm/V
8
ppm/V
4
ppm/mA
8
ppm/mA
0.50 V
1.30 V
mV
μV p-p
1 Initial accuracy includes temperature hysteresis effect.
2 Line and load regulation specifications include the effect of self-heating.
3 Long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period.
Rev. I | Page 8 of 28

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