RF212 View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

RF212

Image-Reject Front End for Dual or Tri-Band GSM Applications

Unspecified 

RF212

Image-Reject Front End

Parameter

Storage Temperature

Supply Voltage (VCC)

Input Voltage Range

Table 5. Absolute Maximum Ratings

Minimum

−40

−0.3

−0.3

Maximum

+125

+3.6

Vcc

Units

°C

V

V

Supply Voltage

Operating Temperature

Table 6. RF212 Recommended Operating Conditions

Parameter

Min Typical Max

2.7

3.0

3.6

−30

+25

+85

Units

V

°C

Table 7. RF212 Electrical Specifications (1 of 3)

(TA = 25 °C, Vcc = 2.7 V, fIF = 400 MHz, Plo = −10 dBm)

Parameter

Supply current::

Enable mode

Sleep mode

RF Input frequency

IF frequency

LO to RF input isolation

Input impedance

Power gain (for 2 kΩ differential output impedance):

High gain mode

Low gain mode 1

Low gain mode 2

Gain step 1

Gain step 2

Temperature coefficient

Gain variation versus frequency

Noise figure:

High gain

Low gain mode 1

Low gain mode 2

Noise figure degradation with blocker:

High gain

Input 1 dB compression point

Input third order intercept point

Differential IF shunt output resistance

Image rejection:

fIF = 400 MHz

fIF = 350 or 450 MHz

Symbol

Test Condition

EGSM900 Mode

ENA = 1

ENA = 0

fIF

GMAX1

GMIN1

GMIN2

GSTEP1

GSTEP2

FTC1

GAINSEL = 0

GAINSEL = 1, STEPSEL = 1

GAINSEL = 1, STEPSEL = 0

IP1DB

IP3

GAINSEL = 0

GAINSEL = 1, STEPSEL = 1

GAINSEL = 1, STEPSEL = 0

−22 dBm blocker,

GAINSEL = 0 (Note 1)

high gain mode

low gain mode

Min Typical Max

15

30

925

960

350

400

450

30

50

20

22

25

0

10

–24

–22

–20

–14

–12

–10

–0.02

0.8

2.3

3.5

18

10

1.6

−22

–20

−18

–13

−12

2

35

50

25

Units

mA

µA

MHz

MHz

dB

Ω

dB

dB

dB

dB

dB

dB/°C

dB

dB

dB

dB

dB

dBm

dBm

dBm

kΩ

dB

dB

4

May 24, 2000

Conexant

Proprietary Information and Specifications are Subject to Change

100780D

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