RJH60F4DPQ-A0 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

RJH60F4DPQ-A0

Silicon N-Channel IGBT High Speed Power Switching

Renesas Electronics 

Preliminary Datasheet

RJH60F4DPQ-A0

Silicon N Channel IGBT

High Speed Power Switching

R07DS0325EJ0100

Rev.1.00

Apr 06, 2011

Features

• Low collector to emitter saturation voltage

VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)

• Built in fast recovery diode in one package

• Trench gate and thin wafer technology

• High speed switching

tf = 80 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)

Outline

RENESAS Package code: PRSS0003ZH-A

(Package name: TO-247A)

C

4

123

1. Gate

2. Collector

G

3. Emitter

4. Collector

E

Absolute Maximum Ratings

Item

Collector to emitter voltage

Gate to emitter voltage

Collector current

Tc = 25 °C

Tc = 100 °C

Collector peak current

Collector to emitter diode forward peak current

Collector dissipation

Junction to case thermal impedance (IGBT)

Junction to case thermal impedance (Diode)

Junction temperature

Storage temperature

Notes: 1. Pulse width limited by safe operating area.

2. PW ≤ 5 μs, duty cycle ≤ 1%

Symbol

VCES

VGES

IC Note1

IC Note1

ic(peak) Note1

iDF(peak) Note2

PC

θj-c

θj-cd

Tj

Tstg

Ratings

600

±30

60

30

120

100

235.8

0.53

2.0

150

–55 to +150

(Tc = 25°C)

Unit

V

V

A

A

A

A

W

°C/W

°C/W

°C

°C

R07DS0325EJ0100 Rev.1.00

Apr 06, 2011

Page 1 of 7

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