RJK5015DPK7 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

RJK5015DPK7

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

RJK5015DPK

Silicon N Channel MOS FET

High Speed Power Switching

Features

 Low on-resistance

 Low leakage current

 High speed switching

Outline

RENESAS Package code: PRSS0004ZE-A

(Package name:TO-3P)

D

1

2

3

G

S

Preliminary Datasheet

REJ03G1360-0300

Rev.3.00

Jun 30, 2010

1. Gate

2. Drain (Flange)

3. Source

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Avalanche current

Avalanche energy

Channel dissipation

Channel to case thermal impedance

Channel temperature

Storage temperature

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

3. STch = 25C, Tch  150C

Symbol

VDSS

VGSS

ID

ID

Note1

(pulse)

IDR

IDR

Note1

(pulse)

IAPNote3

EARNote3

Pch Note2

ch-c

Tch

Tstg

Ratings

500

±30

25

75

25

75

7

2.7

150

0.833

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

A

mJ

W

C/W

C

C

REJ03G1360-0300 Rev.3.00

Jun 30, 2010

Page 1 of 6

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