RJK5015DPM View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

RJK5015DPM

Silicon N-Channel MOS FET High Speed Power Switching

Renesas Electronics 

RJK5015DPM

Electrical Characteristics

Item

Symbol Min

Drain to source breakdown voltage

V(BR)DSS

500

Zero gate voltage drain current

IDSS

—

Gate to source leak current

IGSS

—

Gate to source cutoff voltage

VGS(off)

3.0

Static drain to source on state

resistance

RDS(on)

—

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Total gate charge

Qg

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

Body-drain diode forward voltage

VDF

—

Body-drain diode reverse recovery time

trr

—

Notes: 5. Pulse test

Typ

—

—

—

—

0.21

2600

270

32

42

59

103

45

66

14

29

0.96

380

Max

—

1

±0.1

4.5

0.24

Unit

V

μA

μA

V

Ω

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

VDS = 500 V, VGS = 0

VGS = ±30 V, VDS = 0

VDS = 10 V, ID = 1 mA

ID = 12.5 A, VGS = 10 V Note5

—

—

—

—

—

—

—

—

—

—

1.60

—

pF VDS = 25 V

pF VGS = 0

pF f = 1 MHz

ns ID = 12.5 A

ns VGS = 10 V

ns RL = 20 Ω

ns Rg = 10 Ω

nC VDD = 400 V

nC VGS = 10 V

nC ID = 25 A

V IF = 25 A, VGS = 0 Note5

ns IF = 25 A, VGS = 0

diF/dt = 100 A/μs

REJ03G1753-0100 Rev.1.00 Oct 26, 2009

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